Prediction of the current versus voltage behavior of devices based on organic semiconductor guest-host systems

被引:9
|
作者
Jakobsson, Fredrik L. E. [1 ]
Crispin, Xavier [1 ]
Berggren, Magnus [1 ]
机构
[1] Linkoping Univ, Dept Sci & Technol ITN, S-60174 Norrkoping, Sweden
基金
瑞典研究理事会;
关键词
Host-guest system; Diode; Trapping; Modeling; Hopping; Gaussian density of states; CHARGE-LIMITED CURRENTS; LIGHT-EMITTING DEVICES; ENERGY-TRANSFER; TRANSPORT; STATES;
D O I
10.1016/j.orgel.2008.10.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic semiconductor blends are commonly used in organic based (opto-) electronic devices. They are composed of two types of (macro-) molecules, referred to as the guest and host. To achieve optimum device operation, the chemical nature, electronic structure, molecular order and the relative concentration of the guests and host are crucial. Here, we present simulation results of the current density versus the voltage (J-V) behavior of a two terminal device based on a variable-range hopping model in which the electronic states of the guest and host are represented by two Gaussian distributions. The J-V behavior is investigated for various energetic mismatches between guest and host states, widths of the distribution as well as the guest concentrations. Finally, a simple tool enabling easy prediction of the J-V behavior of organic host-guest diodes is derived. (C) 2008 Published by Elsevier B.V.
引用
收藏
页码:95 / 106
页数:12
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