Modeling and Design Considerations for Negative Capacitance Field-Effect Transistors

被引:0
|
作者
Hoffmann, Michael [1 ]
Pesic, Milan [1 ]
Slesazeck, Stefan [1 ]
Mikolajick, Thomas [1 ,2 ]
机构
[1] NaMLab gGmbH, D-01187 Dresden, Germany
[2] Tech Univ Dresden, Chair Nanoelect Mat, D-01069 Dresden, Germany
关键词
negative capacitance; ferroelectric; domains; internal metal; hafnium oxide;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Stabilization of ferroelectric negative capacitance (NC) in a transistor gate stack is a promising pathway towards future low power electronics. However, most modeling efforts of such NCFETs are based on single-domain Landau theory, which is an oversimplification that leads to incorrect predictions and device design. By extending the Landau model to describe more than one domain, it is shown how an internal metal electrode inherently destabilizes NC. Consequently, NCFETs have to be designed without internal metal electrode to function. Furthermore, the use of single-domain Landau theory to model NCFETs with HfO2 based ferroelectrics is critically discussed.
引用
收藏
页码:1 / 4
页数:4
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