Photodoping and in-gap interface states across the metal-insulator transition in LaAlO3/SrTiO3 heterostructures

被引：23
|
作者：
Ristic, Z. [1 ,2 ]
Di Capua, R. [1 ,3 ]
Chiarella, F. [1 ]
De Luca, G. M. [1 ]
Maggio-Aprile, I. [2 ]
Radovic, M. [4 ]
Salluzzo, M. [1 ]
机构：
[1] CNR SPIN, I-80126 Naples, Italy
[2] Univ Geneva, Dept Phys Mat Condensee, CH-1211 Geneva 4, Switzerland
[3] Univ Molise, Dipartimento Sci Salute, I-86100 Campobasso, Italy
[4] LSNS EPFL, CH-1015 Lausanne, Switzerland
来源：
PHYSICAL REVIEW B | 2012年 / 86卷 / 04期
关键词：
SRTIO3; SUPERCONDUCTIVITY; COEXISTENCE; MODULATION; OXIDES;
D O I：
10.1103/PhysRevB.86.045127
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
By using scanning tunneling microscopy/spectroscopy we show that the interface between LaAlO3 and SrTiO3 band insulators is characterized by in-gap interface states. These features were observed in insulating as well as conducting LaAlO3/SrTiO3 bilayers. The data show how the interface density of states evolves across the insulating to metal transition, demonstrating that nanoscale electronic inhomogeneities in the system are induced by spatially localized electrons.
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页数：4
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