Electrochemical Deposition and Characterization of Ni in Mesoporous Silicon

被引:26
|
作者
Dolgiy, A. [1 ]
Redko, S. V. [1 ]
Bandarenka, H. [1 ]
Prischepa, S. L. [2 ]
Yanushkevich, K. [3 ]
Nenzi, P. [4 ]
Balucani, M. [4 ]
Bondarenko, V. [1 ]
机构
[1] Belarusian State Univ Informat & Radioelect, Dept Micro & Nanoelect, Minsk 220013, BELARUS
[2] Belarusian State Univ Informat & Radioelect, Dept Telecommun, Minsk 220013, BELARUS
[3] Belarusian Acad Sci, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS
[4] Univ Roma La Sapienza, Dept Informat Engn Elect & Telecommun, I-00184 Rome, Italy
关键词
MAGNETIC-PROPERTIES; COMPOUND FORMATION; GROWTH; NI2SI; NICKEL; FABRICATION; INTERFACE; ARRAYS; FILM;
D O I
10.1149/2.050210jes
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Nickel nanowires have been formed by stationary electrochemical deposition of nickel into mesoporous silicon templates from the modified Watts bath. Monitoring of the porous silicon potential during the electrochemical deposition has given the determination of the emergence of Ni on the outer surface of porous layer. Maximum filling factor of porous silicon with Ni has been achieved to 67%. The pore dimensions have been found to define the length and diameter of the Ni nanowires that have equaled to 10 mu m and 100-120 nm, respectively. The polycrystalline nature of the nickel nanowires, as well as the expansion of nickel lattice constant in comparison with bulk material has been established by analyzing the X-ray diffraction spectra. The synthesized samples have possessed ferromagnetic properties, which have been confirmed by temperature measurements of the magnetization. Smaller values of the specific magnetization of the Ni/PS samples and the atomic magnetic moment of Ni atoms at the low temperature with respect to those of bulk material have been suggested to be mostly caused by formation of nickel silicide at the beginning of the Ni electrochemical deposition. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.050210jes] All rights reserved.
引用
收藏
页码:D623 / D627
页数:5
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