X-ray standing-wave technique as a source of complementary information in structural characterization of thin surface layers

被引：0

作者：

Bocchi, C ^{[1
]}

Franzosi, P ^{[1
]}

Imamov, RM ^{[1
]}

Maslov, AV ^{[1
]}

Mukhamedzhanov, EK ^{[1
]}

Pashaev, EM ^{[1
]}

机构：

[1] AV SHUBNIKOV CRYSTALLOG INST,MOSCOW 117333,RUSSIA

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1997年 / 19卷 / 01期

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D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Lattice distortions in a 100 keV O+-implanted (001) InP crystal with dose phi = 10(15) atoms/cm(2), have been investigated by high-resolution X-ray diffraction and X-ray standing-wave techniques. Besides direct analysis of equivalent strain and damage profiles, the use of photoelectrons in the X-ray standing-wave method provides valuable complementary information on completely disordered surface layers which is not accessible by conventional X-ray diffraction. By numerical simulation of the experimental X-ray diffraction and photoelectron yield profiles an amorphous surface layer of about 200 nm has been found.

引用

页码：65 / 72

页数：8

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