Experimental study of InP-based InAlAs/InGaAs quantum well infrared photodetectors operating at the 3-5 μm wavelength region

被引：5
|
作者：
Zhang, YG [1 ]
Li, AZ [1 ]
Chen, JX [1 ]
Yang, QK [1 ]
Ren, YC [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 1999年 / 16卷 / 10期
关键词：
D O I：
10.1088/0256-307X/16/10/017
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Gas source molecular beam epitaxy grown InP-based InAlAs/lnGaAs quantum well infrared photodetectors operating at 3-5 mu m atmosphere window have been fabricated; their structural, electrical and optical characteristics have been investigated. The detectors show peak response wavelength lambda(p) at 3.85 mu m with spectral width Delta lambda/lambda(p) of 4.6% and 7.2% at 1 and 5 V bias voltages, respectively. Very low dark current of the detectors has been observed. At 2V bias the dark current is below 1 nA at 77K and remains low value of 10nA at 150K. The background limited infrared performance temperature T-BLIP as high as 165K has been measured.
引用
收藏
页码：747 / 749
页数：3
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