The Method of Diode Modeling and Novel Equivalent Circuit for Microwave Rectifiers

被引:0
|
作者
Hirakawa, Takashi [1 ]
Hao, Zhang [2 ]
Shinohara, Naoki [1 ]
Guo, Yong Xin [2 ]
机构
[1] Kyoto Univ, RISH, Uji, Kyoto 6110011, Japan
[2] Natl Univ Singapore, 21 Lower Kent Ridge Rd, Singapore 119077, Singapore
来源
PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2019年
基金
日本科学技术振兴机构;
关键词
diode; rectifier; extracting parameters; GaAs; EXTRACTION;
D O I
10.1109/apmc46564.2019.9038403
中图分类号
TN [电子技术、通信技术];
学科分类号
0809 ;
摘要
For the design of rectifiers, the accurate modeling method for diode is necessity. By the measurement, scattering parameters, which expresses the microwave input characteristics, can be obtained. In previous research, the modeling method using scattering parameters are discussed. Herein, we focused on the modeling method for the design of single-shunt rectifiers. In this case, only SI is necessity for the design. Then, applied the former method to this condition. First, the traditional equivalent circuit is assumed in the parameter extracting process. However, the extracted result does not agreed with the fundamental physical rules. Herein, we developed the new equivalent circuit, which is suitable for our assuming situations. As a result, the extracted results using our proposed circuit show the much better than that with using the traditional circuit.
引用
收藏
页码:991 / 993
页数:3
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