Calculation of transport parameters of SiO2 polymorphs

被引:2
|
作者
Gnani, E
Reggiani, S
Colle, R
Rudan, M
机构
[1] Univ Bologna, Dipartimento Elettron Informat & Sistemist, I-40136 Bologna, Italy
[2] Univ Bologna, Dipartimento Chim Applicata & Sci Mat, I-40136 Bologna, Italy
关键词
silicon dioxide; full-band structure; semiconductor devices; silica polymorphs; density of states; transport properties;
D O I
10.1155/2001/64901
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Silica polymorphs have been analyzed, that are similar to the amorphous phase Of SiO2; specifically, the alpha- and beta-quartz, and the a- and beta-cristobalite have been addressed. Two different ab initio methods have been used to calculate the full-band structure and the electronic properties of the polymorphs. In particular, the Hartree-Fock (HF) and Density-Functional Theory (DFT) approaches have been selected. A comparison of the energy-band branches and DOS shapes is reported, showing the similarities of the electrical properties that characterize the polymorphs under study. Finally, some relevant properties are compared for the analyzed set of polymorphs.
引用
收藏
页码:311 / 315
页数:5
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