Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

被引：14

作者：

Ullah, A. R. ^{[1
]}

Joyce, H. J. ^{[2
]}

Burke, A. M. ^{[1
]}

Wong-Leung, J. ^{[2
]}

Tan, H. H. ^{[2
]}

Jagadish, C. ^{[2
]}

Micolich, A. P. ^{[1
]}

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 10期

基金：

澳大利亚研究理事会;

关键词：

InAs; nanowire FETs; wurtzite; zincblende; III-V NANOWIRES; TWINNING SUPERLATTICES; HETEROSTRUCTURES; GROWTH;

D O I：

10.1002/pssr.201308014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：911 / 914

页数：4

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