Strengthening of Ti3(Si, Al)C2 by Doping with Tungsten

被引：11
|
作者：
Zheng, Liya Y. [2 ,3 ]
Wang, Jingyang Y. [2 ]
Chen, Jixin X. [2 ]
Zhou, Yanchun C. [1 ]
机构：
[1] ARIMPT, Sci & Technol Funct Lab, Beijing 100076, Peoples R China
[2] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
[3] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2012年 / 95卷 / 12期
关键词：
TEMPERATURE MECHANICAL-PROPERTIES; IMPROVED OXIDATION RESISTANCE; TERNARY CARBIDE TI3SIC2; ZIRCONIUM DIBORIDE; COMPOSITES; ADDITIONS; NB; AL; SI;
D O I：
10.1111/jace.12050
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Improving the high-temperature strength and stiffness of Ti3SiC2 is the task of many investigations. However, methods for high-temperature strengthening have not been established although various ways are applicable to enhance the room-temperature mechanical properties of Ti3SiC2. In this work, we report that significant strengthening was realized at both room and high temperatures by incorporating a small amount of W into Ti3(Si, Al)C2. The onsite temperature for the rapid degradation of stiffness and strength moved more than 150 degrees C upward to over 1200 degrees C. The flexural strength of 5 at.% W-doped Ti3(Si, Al)C2 is 632.9 MPa at RT and 285 MPa at 1200 degrees C, being 176% and 170% of those for baseline material, respectively.
引用
收藏
页码：3726 / 3728
页数：3
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