Addressable Nanowire Field-Effect-Transistor Biosensors With Local Backgates

被引:7
|
作者
Baek, David J. [1 ]
Choi, Sung-Jin [1 ]
Ahn, Jae-Hyuk [1 ]
Kim, Jee-Yeon [1 ]
Choi, Yang-Kyu [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
基金
新加坡国家研究基金会;
关键词
Biosensor; double gate; field-effect transistor (FET); FinFET; ELECTRICAL DETECTION; SILICON NANOWIRES; SENSITIVITY; SENSOR;
D O I
10.1109/TED.2012.2201484
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Direct electrical detection of the binding of antibody and antigen of avian influenza virus was demonstrated through a biosensor derived from a double-gate FinFET. A simple detection method was employed in which the charge effect coming from the biomolecules was observed through the threshold voltage V-T shift. Due to the presence of a local backgate, the proposed device is individually addressable and the operating voltage is markedly low compared with similar nanowire-type biosensors. Furthermore, its unique structure allows for the channel to be immune to the noise from the biomolecules, which can be problematic for nanogap field-effect-transistor biosensors. The proposed device is complementary metal-oxide-semiconductor compatible and highly reproducible, and monolithic integration with the readout circuits is achievable. Hence, this approach provides a step toward the large-scale development of sensor chips for their potential use in medicine and biotechnology.
引用
收藏
页码:2507 / 2511
页数:5
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