Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

被引：17

作者：

Olson, B. V. ^{[1
]}

Kim, J. K. ^{[1
]}

Kadlec, E. A. ^{[1
]}

Klem, J. F. ^{[1
]}

Hawkins, S. D. ^{[1
]}

Leonhardt, D. ^{[1
]}

Coon, W. T. ^{[1
]}

Fortune, T. R. ^{[1
]}

Cavaliere, M. A. ^{[1
]}

Tauke-Pedretti, A. ^{[1
]}

Shaner, E. A. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 18期

关键词：

SEMICONDUCTORS;

D O I：

10.1063/1.4935159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be vertical bar F1F2 vertical bar = 0.292. The measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. Excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 13 条

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APPLIED PHYSICS LETTERS, 2018, 112 (25)
[2] Influence of carrier concentration on the minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices
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[3] Mid-wavelength infrared InAsSb/InAs nBn detectors and FPAs with very low dark current density
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[4] Advancing carrier transport models for InAs/GaSb type-II superlattice mid-wavelength infrared photodetectors
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[6] Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber
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CHINESE OPTICS LETTERS, 2024, 22 (01)
[7] Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber
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[8] Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution
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[9] Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms
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[10] Electrical modeling of InAs/GaSb superlattice mid-wavelength infrared pin photodiode to analyze experimental dark current characteristics
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