Effects of hydrogen on the electronic properties of Ga(AsBi) alloys

被引：9
|
作者：
Pettinari, G. [1 ]
Patane, A. [1 ]
Polimeni, A. [2 ]
Capizzi, M. [2 ]
Lu, Xianfeng [3 ]
Tiedje, T. [4 ]
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Roma La Sapienza, CNISM Dipartimento Fis, I-00185 Rome, Italy
[3] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z4, Canada
[4] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8W 3P6, Canada
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期
关键词：
D O I：
10.1063/1.4768237
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of hydrogen incorporation on the electronic properties of Ga(AsBi) alloys are investigated in a wide range of Bi-concentration (0.6% <= x <= 10.6%) by Hall effect measurements in magnetic fields up to 14 T and by photoluminescence spectroscopy. For all the investigated Bi-concentrations, we report the passivation of Bi-induced shallow acceptor levels-responsible for the native p-type conductivity in Ga(AsBi)-and a tenfold increase of the hole mobility upon hydrogen incorporation in the host lattice. The emission energy is, instead, negligibly affected by hydrogenation, indicating that the narrowing of the band-gap energy with Bi and the native p-type conductivity are two uncorrelated effects arising from different Bi-induced electronic levels. Passivation by hydrogen of the shallow Bi-acceptor levels makes also possible to identify deep Bi-acceptor states. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768237]
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页数：5
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