Ultrastructure of microsporogenesis and microgametogenesis in Campsis radicans (L.) Seem. (Bignoniaceae)

被引:8
|
作者
Konyar, Sevil Tutuncu [1 ]
机构
[1] Trakya Univ, Fac Sci, Dept Biol, TR-22030 Edirne, Turkey
关键词
Ultrastructure; Microsporogenesis; Microgametogenesis; Sporoderm ontogeny; Campsis; Bignoniaceae; CAESALPINIA-JAPONICA LEGUMINOSAE; POLLEN WALL DEVELOPMENT; EXINE DEVELOPMENT; CELL-WALL; ONTOGENY; SPORODERM; ACTIVATION; INITIATION; CYTOPLASM; PROTEINS;
D O I
10.1007/s00606-013-0883-x
中图分类号
Q94 [植物学];
学科分类号
071001 ;
摘要
In the present study, microsporogenesis, microgametogenesis and pollen wall ontogeny in Campsis radicans (L.) Seem. were studied from sporogenous cell stage to mature pollen using transmission electron microscopy. To observe the ultrastructural changes that occur in sporogenous cells, microspores and pollen through progressive developmental stages, anthers at different stages of development were fixed and embedded in Araldite. Microspore and pollen development in C. radicans follows the basic scheme in angiosperms. Microsporocytes secrete callose wall before meiotic division. Meiocytes undergo meiosis and simultaneous cytokinesis which result in the formation of tetrads mostly with a tetrahedral arrangement. After the development of free and vacuolated microspores, respectively, first mitotic division occurs and two-celled pollen grain is produced. Pollen grains are shed from the anther at two-celled stage. Pollen wall formation in C. radicans starts at tetrad stage by the formation of exine template called primexine. By the accumulation of electron dense material, produced by microspore, in the special places of the primexine, first of all protectum then columellae of exine elements are formed on the reticulate-patterned plasma membrane. After free microspore stage, exine development is completed by the addition of sporopollenin from tapetum. Formation of intine layer of pollen wall starts at the late vacuolated stage of pollen development and continue through the bicellular pollen stage.
引用
收藏
页码:303 / 320
页数:18
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