High-gain Broadband CMOS Distributed Power Amplifier for 5G Communications

被引：0
|
作者：
Li, Peipei [1 ]
Wang, Jie [2 ]
Cui, Jie [1 ]
机构：
[1] Nanjing Univ Sci & Technol, Sch Elect & Optic Engn, Nanjing, Peoples R China
[2] Nanjing Elect Devices Inst, Nanjing 210000, Peoples R China
来源：
2022 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT) | 2022年
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1109/ICMMT55580.2022.10022928
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Analysis and design of an mm-wave wideband distributed power amplifier (PA) based on SMIC 40nm CMOS technology are presented. Stacked structure based on triple cascode cells forms the power cells of the distributed amplifier. Combining the active power division and power combination networks, the distributed amplifier achieves a simulated output 1dB compression point (OP1dB) 15.04dBm, peak power-added efficiency (PAE) of 6% and a saturated output power (P-sat) of 19.45 dBm at 24 GHz. The amplifier achieves maximum gain of higher than 22dB in the simulated bandwidth from 14 to 34 GHz.
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页数：3
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