Collective charge transport in semiconductor-metal hybrid nanocomposite

被引:7
|
作者
Basu, Tuhin Shuvra [1 ]
Ghosh, Siddhartha [2 ]
Gierlotka, Stanislaw [3 ]
Ray, Mallar [1 ]
机构
[1] Bengal Engn & Sci Univ, Sch Mat Sci & Engn, Howrah 711103, W Bengal, India
[2] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA
[3] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland
关键词
NANOSTRUCTURES; CONDUCTIVITY;
D O I
10.1063/1.4790300
中图分类号
O59 [应用物理学];
学科分类号
摘要
Collective charge transport through a hybrid nanocomposite made of Ag nanoparticles (NPs) embedded in ultra-small Si quantum dot (QD) matrix exhibits unexpected and fascinating characteristics. Metallic inclusion (10 wt. % of Ag NPs) in the Si QD matrix affects six orders of magnitude increase in current. In the semiconductor-metal hybrid, three different charge transport mechanisms-quantum tunneling through insulating barriers, variable range hoping, and simple thermally activated conduction dominate in three different temperature regimes that are influenced by bias voltage. We show that there is a cross-over from one transport mechanism to the other and determine the voltage dependent cross-over temperatures. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790300]
引用
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页数:5
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