Sintering Behavior and Dielectric Properties of BZN Ceramics Coated by Precursor Solution of CuSO4

(Bi1.5Zn0.5)(Zn0.5Nb1.5)O-7(BZN) ceramic samples were prepared by solid state reaction, In order to reduce the sintering temperature of BZN ceramic we have used liquid coating technology to dope CuO by precursor solution of CuSO4. The sintering behavior, microstructures, phase structures, and dielectric properties were studied. The process reduces the amount of sintering aid and minimized the negative impact of sintering aid on dielectric properties. A ceramic composite which could be sintered well at 900 degrees C and showed good dielectric properties of epsilon(r)=161,tan delta=0.005 and TCF=-398ppm/degrees C(1MHz)was obtained when 0.5mol/l CuSO4 was added to the (Bi1.5Zn0.5)(Zn0.5Nb1.5)O-7 ceramic.