A 1.2-1.6-GHz Substrate-Integrated-Waveguide RF MEMS Tunable Filter

被引:136
|
作者
Sekar, Vikram [1 ]
Armendariz, Marcelino [2 ]
Entesari, Kamran [1 ]
机构
[1] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
[2] Raytheon, Dallas, TX 75243 USA
基金
美国国家科学基金会;
关键词
RF microelectromechanical systems (RF MEMS); spurious suppression; substrate integrated waveguide (SIW); tunable filter;
D O I
10.1109/TMTT.2011.2109006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a high-performance substrate-integrated- waveguide RF microelectromechanical systems (MEMS) tunable filter for 1.2-1.6-GHz frequency range. The proposed filter is developed using packaged RF MEMS switches and utilizes a two-layer structure that effectively isolates the cavity filter from the RF MEMS switch circuitry. The two-pole filter implemented on RT/Duroid 6010LM exhibits an insertion loss of 2.2-4.1 dB and a return loss better than 15 dB for all tuning states. The relative bandwidth of the filter is 3.7 +/- 0.5% over the tuning range. The measured Q(u) of the filter is 93-132 over the tuning range, which is the best reported Q in filters using off-the-shelf RF MEMS switches on conventional printed circuit board substrates. In addition, an upper stopband rejection better than 28 dB is obtained up to 4.0 GHz by employing low-pass filters at the bandpass filter terminals at the cost of 0.7-1.0-dB increase in the insertion loss.
引用
收藏
页码:866 / 876
页数:11
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