Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy

The deposition of a multilayer buffer layer that includes a high-temperature AlN layer grown at a temperature above 1100A degrees C has made it possible to reduce the dislocation density in a GaN layer by 1.5-2 orders of magnitude to values in the range from 9 x 10(8) to 1 x 10(9) cm(-2), compared with the case of growth on a thin low-temperature AlN nucleation layer. The decrease in the dislocation density causes a substantial increase in the electron mobility in the GaN layers to 600-650 cm(2) V-1 s(-1), which is in agreement with the results of calculations and is indicative of the high crystalline perfection of the layers.