Far-infrared study of a quasi-one-dimensional electron gas formed on (100)GaAs facets with hole gas sidegates on a (311)A GaAs substrate

被引：6
|
作者：
Arnone, DD
Burroughes, JH
Pepper, M
Norman, C
Evans, RJ
Burke, T
Ritchie, DA
Grimshaw, MP
机构：
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
[2] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 13期
关键词：
D O I：
10.1063/1.117626
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new type of quasi-one-dimensional electron gas has been realized by using molecular beam epitaxy to grow a high mobility heterostructure on a (311)A GaAs substrate selectively etched to expose (100) facets. The electron gas formed on the (100) facets is confined in one lateral dimension by the p-n junctions formed with the adjacent two-dimensional hole gases on (311)A, thereby forming a p-n-p structure. Far-infrared cyclotron resonance spectra demonstrate the dimensionality of such structures and yield typical lateral confinement energies of 22.3 cm(-1) and electronic widths of similar to 900 nm. These estimates are supported by cathodoluminescence data. (C) 1996 American Institute of Physics.
引用
收藏
页码：1933 / 1935
页数：3
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