The Structural and Electrical Properties of Al/Pb(Zr0.52Ti0.48)O3/Al2O3/Si with an Al2O3 Layer Prepared by using the Molecular Atomic Deposition Method

被引：1
|
作者：
Yang Yi [1 ,2 ]
Zhou Chang-Jian [1 ,2 ]
Peng Ping-Gang [1 ,2 ]
Xie Dan [1 ,2 ]
Ren Tian-Ling [1 ,2 ]
Pan Xiao [3 ]
Liu Jing-Song [4 ]
机构：
[1] Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
[3] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[4] SW Univ Sci & Technol, State Key Lab Cultivat Base Nonmet Composites & F, Mianyang 621010, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2012年 / 29卷 / 12期
基金：
中国国家自然科学基金; 美国国家科学基金会;
关键词：
11;
D O I：
10.1088/0256-307X/29/12/128501
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The structural and electrical properties of a metal-ferroelectric-insulator-semiconductor (MFIS) structure with an Al2O3 layer prepared by using the molecular atomic deposition method and Pb(Zr0.52Ti0.48)O-3 (PZT) deposited by the radio frequency magnetron sputtering method are investigated. PZT exhibits a very smooth surface and (110) orientation of the perovskite phase. The MFIS structure shows well-behaved clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization under a sweep voltage up to +/- 40 V. Memory windows of 1.9 V and 18.14 V in conjunction with leakage current density of 2.42 x 10(-7) A/cm(2) and 8.28 x 10(-7) A/cm(2) are obtained under sweep voltages of +/- 5 V and +/- 20 V, respectively.
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页数：3
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