Influence of electric current and magnetic field on terahertz photoconductivity in Pb1-x Sn x Te(In)

被引:2
|
作者
Ryabova, L. I. [1 ]
Nicorici, A. V. [2 ]
Danilov, S. N. [3 ]
Khokhlov, D. R. [1 ]
机构
[1] Moscow MV Lomonosov State Univ, Moscow 119991, Russia
[2] Moldavian Acad Sci, Inst Appl Phys, MD-2025 Kishinev, Moldova
[3] Univ Regensburg, D-93040 Regensburg, Germany
基金
俄罗斯基础研究基金会;
关键词
SEMICONDUCTORS; IMPURITIES; STATES;
D O I
10.1134/S0021364013090105
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Photoconductivity of Pb1 - x Sn (x) Te(In) solid solutions in the terahertz spectral range is defined by a new type of local electron states linked to the quasi-Fermi level. The paper deals with investigation of the influence of electric current and magnetic field on the amplitude of the terahertz photoconductivity in Pb1 - x Sn (x) Te(In) alloys of different composition. It is shown that the density of local electron states responsible for the positive persistent photoconductivity decreases with increasing electric current via a sample, as well as with transition to the hole conductivity in samples with a high content of tin telluride (x > 0.26). It is found that the magnetic field dependence of the positive photoconductivity is non-monotonous and has a maximum. The maximum position in magnetic field is proportional to the terahertz radiation quantum energy. Mechanisms responsible for the effects observed are discussed.
引用
收藏
页码:525 / 527
页数:3
相关论文
共 50 条
  • [1] Influence of electric current and magnetic field on terahertz photoconductivity in Pb1 − xSnxTe(In)
    L. I. Ryabova
    A. V. Nicorici
    S. N. Danilov
    D. R. Khokhlov
    JETP Letters, 2013, 97 : 525 - 527
  • [2] Plasma resonance in Pb1-x Ag x Te alloys
    Sharov, M. K.
    SEMICONDUCTORS, 2014, 48 (03) : 299 - 301
  • [3] Investigations of the inductively coupled argon plasma sputtering of Pb1-x Sn x Te ternary solid solution
    Amirov, I. I.
    Zimin, S. P.
    Gorlachev, E. S.
    Naumov, V. V.
    Abramof, E.
    Rappl, P. H. O.
    JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2012, 6 (04) : 643 - 646
  • [4] A novel approach for observing band gap crossings using the SIMS technique in Pb1-x Sn x Te
    Khosravizadeh, Zeinab
    Dziawa, Piotr
    Dad, Sania
    Dabrowski, Andrzej
    Jakiela, Rafal
    JOURNAL OF SEMICONDUCTORS, 2024, 45 (11)
  • [5] ANALYSIS OF THERMOELECTRIC POWER IN PB1-X SNX TE
    OCIO, M
    REVUE DE PHYSIQUE APPLIQUEE, 1972, 7 (03): : 153 - +
  • [6] Industrial prospects of Pb1-x Sn x Te:In with x > 0.3 solid solutions for photodetectors with extended sensitivity spectral range
    Akimov A.N.
    Ishchenko D.V.
    Klimov A.E.
    Neizvestny I.G.
    Pashchin N.S.
    Sherstyakova V.N.
    Shumsky V.N.
    Russian Microelectronics, 1600, Maik Nauka Publishing / Springer SBM (42): : 59 - 62
  • [7] PREPARATION AND PROPERTIES OF PB1-X SNX TE EPITAXIAL FILMS
    FARINRE, TO
    ZEMEL, JN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (01): : 121 - &
  • [8] Preparation and Thermoelectric Properties of Pb1-x Fe x Te Alloys Doped with Iodine
    Cao, X. L.
    Cai, W.
    Deng, H. D.
    Gao, R. L.
    Fu, C. L.
    Pan, F. S.
    JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (05) : 2645 - 2651
  • [9] GAIN-FREQUENCY-CURRENT RELATION FOR PB1-X SNX TE DOUBLE HETEROSTRUCTURE LASERS
    ANDERSON, WW
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (07) : 532 - 543
  • [10] Photoconductivity of the Pb0.75Sn0.25Te:In alloy in an alternating electric field
    Kozhanov, A. E.
    Nikorich, A. V.
    Ryabova, L. I.
    Khokhlov, D. R.
    Dmitriev, A. V.
    Shklover, V.
    SEMICONDUCTORS, 2007, 41 (06) : 663 - 665