Random-telegraph-signal noise in AlGaN/GaN MIS-HEMT on silicon

被引：1

作者：

Li, Yihu ^{[1
]}

Ling, Goh Wang ^{[1
]}

Ng, Geok Ing ^{[1
]}

Liu, Zhi Hong ^{[1
]}

Xiong, Yong-Zhong ^{[2
]}

Lo, Patrick ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] ASTAR, Inst Microelect, Singapore 117685, Singapore

来源：

ELECTRONICS LETTERS | 2013年 / 49卷 / 02期

关键词：

D O I：

10.1049/el.2012.4285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The traps in an AlGaN/GaN metal-insulator-silicon-high-electronmobility-transistor on silicon are investigated by analysing the random-telegraph-signal (RTS) noise in the drain current. Two different types of RTS noise due to the traps at the gate-oxide and AlGaN have been observed in this reported work. Through the analysis of the two RTS noises, the presences of the two trap types are verified and the trap locations have also been identified.

引用

页码：156 / U19

页数：2

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