Growth and scintillation properties of (Lu1-x Tmx)2SiO5 [x=0.001, 0.01, 0.1, 1]

被引：0

作者：

Totsuka, Daisuke ^{[1
]}

Yanagida, Takayuki ^{[2
]}

Fujimoto, Yutaka ^{[1
]}

Yokota, Yuui ^{[1
]}

Yoshikawa, Akira ^{[1
,2
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, New Ind Creat Hatchery Ctr NICHe, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

RADIATION MEASUREMENTS | 2013年 / 55卷

关键词：

Scintillator; Tm3+; Oxyorthosilicate; OXYORTHOSILICATE; CE;

D O I：

10.1016/j.radmeas.2013.01.021

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

(Lu1 - xTmx)(2)SiO5 (x = 0.001, 0.01, 0.1, 1) single crystalline scintillators were grown by the mu-PD method. In transmittance measurement, absorption bands due to Tm3+ 4f-4f transitions were observed at 260, 292, 356, 463, 680 and 790 nm and they could be ascribed to the transition from the H-3(6) ground state to its excited states, I-1(6), P-3(6),D-1(2), (1)G(4), F-3(3) and H-3(4), respectively. Strong emission peak due to D-1(2) -> F-3(4) transition of Tm3+ was shown at 453 nm under X-ray irradiation. Photoluminescence decay time constant caused by this transition were evaluated to be 11.9 mu s. Tm 1% doped one exhibited the highest light yield of 3530 +/- 200 photons/MeV when excited by Cs-137 gamma-ray exposure. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：116 / 119

页数：4

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