SiC Power Semiconductor Devices for new Applications in Power Electronics

被引：5

作者：

Planson, Dominique ^{[1
]}

Tournier, Dominique ^{[1
]}

Bevilacqua, Pascal ^{[1
]}

Dheilly, Nicolas ^{[1
]}

Morel, Herve ^{[1
]}

Raynaud, Christophe ^{[1
]}

Lazar, Mihai ^{[1
]}

Bergogne, Dominique ^{[1
]}

Allard, Bruno ^{[1
]}

Chante, Jean-Pierre ^{[1
]}

机构：

[1] INSA Lyon, Ampere Lab, F-69621 Villeurbanne, France

来源：

2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5 | 2008年

关键词：

SiC-device; High temperature electronics; Power semiconductor device; High voltage Device; Power integrated circuit;

D O I：

10.1109/EPEPEMC.2008.4635632

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper addresses the benefits of SiC semi-conductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.

引用

页码：2457 / +

页数：2

共 50 条

[1] Technical Trends of SiC Power Semiconductor Devices and Their Applications in Power Electronics
Fujishima, Naoto
[J]. IEEJ JOURNAL OF INDUSTRY APPLICATIONS, 2024, 13 (04) : 372 - 378
[2] New Applications in Power Electronics Based on SiC Power Devices
Morel, Herve
Bergogne, Dominique
Planson, Dominique
Allard, Bruno
Meuret, Regis
[J]. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 925 - +
[3] New Era of Power Electronics by SiC Power Devices Evolution
Ino, Kazuhide
[J]. 2014 INTERNATIONAL CONFERENCE ON PLANARIZATION/CMP TECHNOLOGY (ICPT), 2014, : 4 - 4
[4] SIC POWER DEVICES IN POWER ELECTRONICS: AN OVERVIEW
Alves, Luciano F. S.
Gomes, Ruan C. M.
Lefranc, Pierre
Pegado, Raoni de A.
Jeannin, Pierre-Olivier
Luciano, B. A.
Rocha, Filipe V.
[J]. 2017 XIV BRAZILIAN POWER ELECTRONICS CONFERENCE (COBEP), 2017,
[5] Fundamental research on semiconductor SiC and its applications to power electronics
Matsunami, Hiroyuki
[J]. PROCEEDINGS OF THE JAPAN ACADEMY SERIES B-PHYSICAL AND BIOLOGICAL SCIENCES, 2020, 96 (07): : 235 - 254
[6] Wide and Extreme Bandgap Semiconductor Devices for Power Electronics Applications
Chow, T. Paul
[J]. 2014 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC), 2014,
[7] Applications of high voltage power semiconductor devices: potential for diamond electronics
Taylor, PD
Chamund, DJ
Garraway, A
[J]. INDUSTRIAL DIAMOND REVIEW, 2006, (02): : 19 - 22
[8] Power Electronics Innovation by Silicon Carbide Power Semiconductor Devices
Okumura, Hajime
[J]. 2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2014,
[9] Modeling Needs for Power Semiconductor Devices and Power Electronics Systems
Kotecha, Ramchandra
Moreno, Gilberto
Mather, Barry
Narumanchi, Sreekant
[J]. 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2019,
[10] Recent progress and current issues in SiC semiconductor devices for power applications
Johnson, CM
Wright, NG
Uren, MJ
Hilton, KP
Rahimo, M
Hinchley, DA
Knights, AP
Morrison, DJ
Horsfall, AB
Ortolland, S
O'Neill, AG
[J]. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2001, 148 (02): : 101 - 108

← 1 2 3 4 5 →