Unique lack of chemical reactivity for 2,3-dimethyl-2-butene on a Si(100)-2X1 surface

被引:1
|
作者
Madachik, Mark R. [1 ]
Teplyakov, Andrew V. [1 ]
机构
[1] Univ Delaware, Dept Chem & Biochem, Newark, DE 19716 USA
来源
基金
美国国家科学基金会;
关键词
D O I
10.1116/1.2966427
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Adsorption of 2,3-dimethyl-2-butene on Si(100)-2X1 has been studied by a combination of multiple internal reflection Fourier transform infrared spectroscopy and computational investigations implementing density functional theory (DFT). Since the previously studied olefins have been shown to form a di-sigma product on this surface following [2+2] cycloaddition, it was also initially expected for 2,3-dimethyl-2-butene. Infrared spectra taken at 100 K show that 2,3-dimethyl-2-butene adsorbs on the surface molecularly at this temperature. Heating the surface to room temperature left no indication of a chemisorbed product. Large doses at room temperature did not produce any observable absorption bands in the infrared spectrum, indicating that [2+2] cycloaddition of 2,3-dimethyl-2-butene does not occur. This assessment was verified by the Auger electron spectroscopy studies confirming that neither room temperature exposure nor annealing to 800 K produced any carbon remaining on this surface. These experimental observations of the absence of a chemical reaction between an olefin and a very reactive silicon surface were substantiated by DFT investigation of the adsorption kinetics. The formation of two possible pi-bonded precursors was considered, and the energies required to form the di-sigma-bonded product from either one of these precursors were predicted to be substantially higher than the desorption barrier. Thus, 2,3-dimethyl-2-butene is a unique olefin that is very inert with respect to the Si(100)-2X1 surface, making it a desirable carrier gas or a ligand in the precursor molecules in a number of deposition processes involving silicon substrates. (c) 2008 American Vacuum Society.
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页码:1241 / 1247
页数:7
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