Thermal stability of indium tin oxide/n-GaAs heterostructures with and without sulfur passivation

被引：0
|
作者：
Eftekhari, G [1 ]
机构：
[1] SUNY Albany, Dept Elect & Comp Engn, New Paltz, NY 12561 USA
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2000年 / 178卷 / 02期
关键词：
D O I：
10.1002/1521-396X(200004)178:2<709::AID-PSSA709>3.0.CO;2-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thermally evaporated ITO/n-GaAs contacts with and without sulfur passivation are studied. It is determined that passivation improves the thermal stability (up to 700 degrees C annealing temperature) of contacts. This improvement is due to formation of thermally stable S-S, S-As, and S-Ga bonds at GaAs surface layer.
引用
收藏
页码：709 / 714
页数：6
相关论文
共 50 条
  • [1] Thermal stability of Indium Tin Oxide/n-GaAs heterostructures with and without sulfur passivation
    [J]. Eftekhari, G., 2000, Wiley-VCH Verlag Berlin GmbH, Weinheim, Germany (178):
  • [2] THERMAL-STABILITY OF RAPIDLY ANNEALED INDIUM TIN OXIDE N-GAAS HETEROSTRUCTURES
    EFTEKHARI, G
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1560 - 1562
  • [3] THE THERMAL-STABILITY OF INDIUM TIN OXIDE/N-GAAS SCHOTTKY CONTACTS
    MORGAN, DV
    ALIYU, Y
    BUNCE, RW
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 133 (01): : 77 - 93
  • [4] THERMAL-STABILITY OF INDIUM TIN-OXIDE/N-GAAS SCHOTTKY DIODES
    ALIYU, YH
    MORGAN, DV
    BUNCE, RW
    [J]. ELECTRONICS LETTERS, 1992, 28 (02) : 142 - 144
  • [5] Rh/n-GaAs contacts with and without sulfur passivation
    Eftekhari, G
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06): : 3596 - 3598
  • [6] Low resistance indium tin oxide contact to n-GaAs nanowires
    Zhang, J.
    Chia, A. C. E.
    LaPierre, R. R.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (05)
  • [7] INVESTIGATIONS ON THE PHOTOVOLTAIC PROPERTIES OF INDIUM TIN OXIDE (ITO)/N-GAAS HETEROJUNCTIONS
    BALASUBRAMANIAN, N
    SUBRAHMANYAM, A
    [J]. SOLAR CELLS, 1990, 28 (04): : 319 - 325
  • [8] NOVEL INDIUM OXIDE N-GAAS DIODES
    GOLAN, A
    BREGMAN, J
    SHAPIRA, Y
    EIZENBERG, M
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (21) : 2205 - 2207
  • [9] FABRICATION AND PROPERTIES OF INDIUM OXIDE N-GAAS JUNCTIONS
    GOLAN, A
    BREGMAN, J
    SHAPIRA, Y
    EIZENBERG, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) : 1494 - 1500
  • [10] IMPROVEMENTS IN THE ELECTRICAL-PROPERTIES OF INDIUM OXIDE P-INP AND INDIUM OXIDE N-GAAS HETEROSTRUCTURES FORMED AT LOW REACTION TEMPERATURES BY RAPID THERMAL ANNEALING
    EFTEKHARI, G
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (08) : 1159 - 1162
12345