Ultra-Low-Power Switching and Complementary Resistive Switching RRAM by Single-Stack Metal-Oxide Dielectric

被引：0

作者：

Tsai, C. Y. ^{[1
]}

Huang, K. C. ^{[1
]}

Ting, Y. W. ^{[1
]}

Liao, Y. W. ^{[1
]}

Chang, C. Y. ^{[1
]}

Yang, J. J. ^{[1
]}

Lai, P. Y. ^{[1
]}

Chen, H. W. ^{[1
]}

Tang, B. T. ^{[1
]}

Chang, Y. W. ^{[1
]}

Hsieh, C. P. ^{[1
]}

Huang, W. C. ^{[1
]}

Lin, Y. H. ^{[1
]}

Tu, K. C. ^{[1
]}

Hsu, C. Y. ^{[1
]}

Liu, S. C. ^{[1
]}

Chen, J. J. ^{[1
]}

Chu, W. T. ^{[1
]}

Tsai, Y. ^{[1
]}

Shiu, F. J. ^{[1
]}

Wang, C. J. ^{[1
]}

Tsai, C. S. ^{[1
]}

Ong, T. C. ^{[1
]}

Hwang, H. Y. ^{[1
]}

Chang, C. ^{[1
]}

Tran, L. C. ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, Hsinchu 30077, Taiwan

来源：

2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a metal-oxide RRAM with novel Defect Engineering Technology (DET) that achieves forming-free, multi-level capable, self-rectifying, large 2x10(4) resistance window, ultra-low 0.24nW reset power and good endurance of 10(6) cycles at the same time. Besides, by the same DET with additional forming process, we demonstrate a complementary resistive switching (CRS) on single-stack metal-oxide with large 15X resistance window, good endurance of 10(5) cycles and stable high-temperature disturbance.

引用

页数：2

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