Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films

被引：30
|
作者：
Chang, CY
Lin, HY
Lei, TF
Cheng, JY
Chen, LP
Dai, BT
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 300,TAIWAN
[2] NATL NANO DEVICE LABS,HSINCHU 300,TAIWAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 03期
关键词：
D O I：
10.1109/55.485180
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A top-gate p-channel polycrystalline thin film transistor (TFT) has been fabricated using the polycrystalline silicon (poly-Si) film as-deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) and polished by chemical mechanical polishing (CMP), In this process, long-term recrystallization in channel films is not needed. A maximum field effect mobility of 58 cm(2)/V-s, ON/OFF current ratio of 1.110(7), and threshold voltage of -0.54 V were obtained. The characteristics are not poor. In this work, therefore, we have demonstrated a new method to fabricate poly-Si TFT's.
引用
收藏
页码：100 / 102
页数：3
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