Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate

被引：0
|
作者：
Agarwal, A [1 ]
Fiory, AT [1 ]
Gossmann, HJL [1 ]
Rafferty, CS [1 ]
Frisella, P [1 ]
机构：
[1] Eaton Corp, Semicond Equipment Operat, Beverly, MA 01915 USA
来源：
RAPID THERMAL PROCESSING | 1999年 / 84卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ultra-shallow p-type junction formation has been investigated using 1050 degrees C spike anneals in lamp-based and hot-walled rapid thermal processing (RTP) systems. A spike anneal may be characterized by a fast ramp-up to temperature with only a fraction of a second soak-time at temperature. The effects of the ramp-up rate during a spike anneal on junction depth and sheet resistance were measured for rates of 40, 70 and 155 degrees C/s in a lamp-based RTP, and for 50 and 85 degrees C/s in a hot-walled RTP. B+ implants of 0.5, 2 and 5 keV at doses of 2 x 10(14) and 2 x 10(15) cm(-2) were annealed. A significant reduction in junction depth was observed at the highest ramp-up rate for the shallower 0.5-keV B implants, while only a marginal improvement was observed for 2- and 5-keV implants. It is concluded that high ramp-up rates can achieve the desired ultra-shallow junctions with low sheet resistance but only when used in combination with spike anneals and the lowest energy implants. (C) 1999 Elsevier Science Ltd. All rights reserved.
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页码：237 / 241
页数：5
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