Modulation of peak-to-valley current ratio of Coulomb blockade oscillations in Si single hole transistors

We demonstrate a method to modulate the peak-to-valley current ratio of Coulomb blockade oscillation peaks in room temperature-operating Si single-hole tunnel transistors. By connecting the extra p(+)in(+) junction (i.e., a current effluence path) to the drain reservoir, we effectively deplete the leakage current (i.e., valley current) that stem from the diffusion current of the parasitic field-effect transistor within the device. The addition of the extra current-effluence path significantly improves the Coulomb blockade characteristics in comparison to the original Coulomb blockade oscillations. We believe the method is advantageous for designing high performance Si single electron/hole tunnel devices. (C) 2013 AIP Publishing LLC.