Study on the Preparation and Spectral Characteristics of Bi2S3 Nanoribbons

被引:5
|
作者
Lu Juan [1 ]
Han Qiao-feng [1 ]
Yang Xu-jie [1 ]
Lu Lu-de [1 ]
Wang Xin [1 ]
机构
[1] Nanjing Univ Sci & Technol, Mat Chem Lab, Nanjing 210094, Peoples R China
关键词
Bi2S3; nanoribbons; Band gap; Spectral characteristics; NANOWIRES; NANORODS; NANOTUBES; GROWTH; FILMS;
D O I
10.3964/j.issn.1000-0593(2009)01-0048-04
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
In the present study, bismuth sulfide (Bi2S3) nanoribbons were prepared by the hydrothermal method using bismuth nitrate(Bi (NO3)(3) center dot 5H(2)O), thioacetamide (C2H5NS) and nitrilotriacetic acid (C6H9 NO6) as raw materials at 180 degrees C for 12 h. The reaction time was largely reduced and the route has been unreported. The constituent, structure and morphology of the products were. characterized by XRD, XPS and TEM, respectively. The powder X-ray diffraction (XRD) pattern shows that the Bi2S3 crystals belong to the orthorhombic phase (JCPDS: 17-320) with calculated lattice constants a=1.110 6 rim, b=1.099 3 nm and c=0.389 2 nm. which are consistent with the reported values (a=1.114 9 nm, b=1.130 4 nm and c=0.398 1 nm). Transmission electron microscopic (TEM) studies reveal that the appearance of as prepared Bi2S3 is nanoribbon-like with the typical width of about 100 nm; and tire high-resolution transmission electron microscope (HRTEM) image shows that the crystal grows along the y axis. The quantification of X-ray photoelectron spectra (XPS) analysis peak,., gives an atomic ratio of 2 : 3 for Bi : S, which is consistent with the given formula of Bi2S3. Furthermore, the Raman and UV-Vis spectra of the product were also studied. Compared with bulk Bi2S3 (236 cm(-1)), the Raman absorption band of the Bi2S3 nanoribbons (195 cm(-1)) red-shifts 41 cm(-1), which is because Of the surface effect of nanomaterials. Furthermore, the product has absorption at the wavelength of about 450 nm in the UV-Vis region. The direct bang gap energy (E-g) was estimated to be about 1.58 eV(E-g of the bulk Bi2S3 is 1.3 eV), which indicates that the product has potential application in the optical find electrical areas.
引用
收藏
页码:48 / 51
页数:4
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