Compact GaN MMIC T/R module Front-End for X-band pulsed radar

被引：0
|
作者：
Biondi, Andrea [1 ]
D'Angelo, Sara [1 ]
Scappaviva, Francesco [1 ]
Resca, Davide [1 ]
Monaco, Vito Antonio [1 ]
机构：
[1] MEC Srl, Microwave Elect Commun, Bologna, Italy
来源：
2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2016年
关键词：
GaN; T/R module; MMIC; single-chip; power amplifiers; low-noise amplifiers; switch; X-band;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An X-band Single-Chip monolithic microwave integrated circuit (MMIC) has been developed by using a European GaN HEMT technology. The very compact MMIC die occupying only an area of 3.0 mm x 3.0 mm, integrates a high power amplifier (HPA), a low-noise amplifier (LNA) and a robust asymmetrical absorptive/reflective SPDT switch. At the antenna RF pad in the frequency range from 8.6 to 11.2 GHz, nearly 8 W of output power and 22 dB of linear gain were measured when operated in transmit mode. When operated in receive mode, a noise figure of 2.5 dB with a gain of 15 dB were measured at the Rx RF pad in the same frequency range.
引用
收藏
页码：297 / 300
页数：4
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