A Ka-band monolithic low phase noise coplanar waveguide oscillator using InAlAs/lnGaAs HBT

被引：2
|
作者：
Cui, DL
Hsu, S
Pavlidis, D [1 ]
Chin, P
Block, T
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48104 USA
[2] TRW Co Inc, Elect Syst & Technol Div, Redondo Beach, CA 90278 USA
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 02期
关键词：
InAlAs/InGaAs; HBT; oscillator; phase noise;
D O I：
10.1016/S0038-1101(01)00293-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ka-band oscillator has been designed, fabricated and tested using InAlAs/InGaAs HBTs. Coplanar waveguide technology has been employed to improve the Q-factor of the circuit. An output power of 2.6 dBm with DC to RF conversion efficiency of 7.8% was measured at 31.7 GHz. Low phase noise of -87 and -112 dBc/Hz were achieved at an offset frequency of 100 kHz and 1 MHz respectively. These low phase noise values can be attributed to the low I If noise of the InAlAs/InGaAs HBT devices and the coplanar design used for the circuit. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：249 / 253
页数：5
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