A selective electrochemical approach to carbon nanotube field-effect transistors

被引：100

作者：

Balasubramanian, K ^{[1
]}

Sordan, R ^{[1
]}

Burghard, M ^{[1
]}

Kern, K ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

NANO LETTERS | 2004年 / 4卷 / 05期

关键词：

D O I：

10.1021/nl049806d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Commercial fabrication of field-effect transistors (FETs) using carbon nanotubes has been hindered as all current production procedures yield a mixture of metallic and semiconducting tubes. Herein, we present a generic approach utilizing electrochemistry for selective covalent modification of metallic nanotubes, resulting in exclusive electrical transport through the unmodified semiconducting tubes. Toward this goal, the semiconducting tubes are rendered nonconductive by application of an appropriate gate voltage prior to the electrochemical modification. The FETs fabricated in this manner display good hole mobilities and a ratio approaching 10(6) between the current in the ON and OFF state.

引用

页码：827 / 830

页数：4

共 50 条

[1] Carbon nanotube field-effect transistors
不详
[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2008, 2 (03): : A1 - A1
[2] Carbon nanotube field-effect transistors
不详
[J]. JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 2008, 46 (11) : A1 - A1
[3] Ballistic carbon nanotube field-effect transistors
Ali Javey
Jing Guo
Qian Wang
Mark Lundstrom
Hongjie Dai
[J]. Nature, 2003, 424 : 654 - 657
[4] Carbon nanotube field-effect transistors: An assessment
Pulfrey, D. L.
[J]. Nanoscience and Technology, Pts 1 and 2, 2007, 121-123 : 503 - 506
[5] Ballistic carbon nanotube field-effect transistors
Javey, A
Guo, J
Wang, Q
Lundstrom, M
Dai, HJ
[J]. NATURE, 2003, 424 (6949) : 654 - 657
[6] Photoresponse of carbon nanotube field-effect transistors
Ohno, Y
Kishimoto, S
Mizutani, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4A): : 1592 - 1595
[7] Carbon Nanotube-Gated Carbon Nanotube Field-Effect Transistors
Li, Hong
Zou, Jianping
Zhang, Qing
[J]. NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2010, 2 (01) : 21 - 25
[8] Electrochemical carbon nanotube field-effect transistor
Krüger, M
Buitelaar, MR
Nussbaumer, T
Schönenberger, C
Forró, L
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (09) : 1291 - 1293
[9] Carbon nanotube field-effect transistors with molecular interface
Chen, Kan-Sheng
McGill, Stephen A.
Xiong, Peng
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (12)
[10] Inherent linearity in carbon nanotube field-effect transistors
Baumgardner, James E.
Pesetski, Aaron A.
Murduck, James M.
Przybysz, John X.
Adam, John D.
Zhang, Hong
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (05)

← 1 2 3 4 5 →