Semi-classical modeling of nano-mechanical transistors

被引:9
|
作者
Scorrano, Alessandro [1 ]
Carcaterra, Antonio [1 ,2 ]
机构
[1] Univ Roma La Sapienza, Dipartimento Ingn Meccan & Aerosp, Rome, Italy
[2] Univ Roma La Sapienza, CNIS Ctr Nanotechnol, Rome, Italy
关键词
NEMS; Transistor; Vibrations; Quantum tunnel; Self-excitation; Charge transport; SINGLE-ELECTRON TRANSPORT;
D O I
10.1016/j.ymssp.2013.02.013
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
The introduction of vibration-based Nano Electro-Mechanical Transistors (NEMT) opens a new horizon for mechanics in computer science. NEMT working principle is based on an electrical charge shuttle between two electrodes operated by a vibrating conductor body. Advantages of these novel devices would be very low power dissipation, limited influence of external electromagnetic disturbances, and improved thermal resistance. The paper introduces an analytical model for such a device, in which the matching of a mechanical resonator and an electric circuit is studied: the coupling is provided by capacitance effects, electrostatic force and the quantum tunneling. The approach is quasi-classical, describing the quantum phenomena through a non-linear conductance and using a continuous variable for the charges. Through suitably introduced simplifications, the model is reduced to a set of two differential equations in terms of pillar position and charge. These equations represent the simplest model still preserving the basic phenomenology of the investigated system. Numerical simulations show different possible motion regimes, both in the single- and multiple-module configurations, the latter able to reproduce the conventional transistor functionality. This opens the way to mechanical voltage-driven switches or amplifiers. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:489 / 514
页数:26
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