Fe-Te-Se epitaxial thin films with enhanced superconducting properties

被引:33
|
作者
Mele, Paolo [1 ]
Matsumoto, Kaname [2 ,3 ]
Fujita, Kouhei [2 ]
Yoshida, Yutaka [3 ,4 ]
Kiss, Takanobu [3 ,5 ]
Ichinose, Ataru [3 ,6 ]
Mukaida, Masashi [3 ,7 ]
机构
[1] Hiroshima Univ, Inst Sustainable Sci & Dev, Higashihiroshima 7398530, Japan
[2] Kyushu Inst Technol, Dept Mat Sci & Engn, Tobata Ku, Kitakyushu, Fukuoka 8048550, Japan
[3] TRIP, JST, Tsukuba, Ibaraki 3050047, Japan
[4] Nagoya Univ, Dept Energy Engn & Sci, Chikikusa Ku, Nagoya, Aichi 4648603, Japan
[5] Kyushu Univ, Dept Elect & Elect Syst Engn, Nishi Ku, Fukuoka 8128581, Japan
[6] Cent Res Inst Elect Power Ind, Elect Power Engn Res Lab, Yokosuka, Kanagawa 2400196, Japan
[7] Kyushu Univ, Dept Mat Sci & Engn, Nishi Ku, Fukuoka 8128581, Japan
来源
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2012年 / 25卷 / 08期
关键词
D O I
10.1088/0953-2048/25/8/084021
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial Fe-Te-Se thin films were deposited by pulsed laser deposition at 250-600 degrees C on SrTiO3 (100), MgO (100), LaAlO3 (100) and CaF2 (100) single crystal substrates. The best superconducting film was grown on CaF2: T-c(onset) = 20.0 K and T-c(0) = 16.18 K with T-dep = 300 degrees C and 3 Hz. Critical current density J(c) (T = 4.2 K) was 0.41 x 10(6) A cm(-2) at 0 T and 0.23 x 10(6) A cm(-2) at 9 T. The angular dependence of J(c) shows a broad c-axis correlated peak when B >= 3 T.
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页数:6
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