Vickers indentation on the {001} faces of ZnS sphalerite under UV illumination and in darkness. Crack patterns and rosette microstructure

被引:13
|
作者
Koubaiti, S
Couderc, JJ
Levade, C
Vanderschaeve, G
机构
[1] Lab. Phys. Solides Associe au CNRS, ERS 111, Complexe Scientifique de Rangueil
关键词
D O I
10.1016/1359-6454(95)00420-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vickers microhardness indentations are performed on the (001) surface of ZnS sphalerite single crystals in darkness and under UV illumination, close to the band absorption edge. For low applied loads, the crack length and the rosette size confirm the hardening effect of illumination (positive photoplastic effect) that causes a lowering of the dislocation mobility. For high applied loads the positive photoplastic effect is masked by a strong workhardening in the highly strained zone. In darkness as well as under irradiation, perpendicular rosette arms have the same length, showing that alpha and beta perfect dislocations have similar mobilities at variance with III-V compounds. However, the observed asymmetry in the dissociation behaviour suggests that partial dislocations have different mobilities. Copyright (C) 1996 Acta Metallurgica Inc.
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页码:3279 / 3291
页数:13
相关论文
共 2 条
  • [1] Vickers indentation on the {001} faces of GaAs under infrared illumination and in darkness
    Vanderschaeve, G. (vandersc@cemes.fr), 2000, Taylor and Francis Ltd. (80):
  • [2] Vickers indentation on the {001} faces of GaAs under infrared illumination and in darkness
    Koubaïti, S
    Levade, C
    Vanderschaeve, G
    Couderc, JJ
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 2000, 80 (01): : 83 - 104