A New Half-Bridge Impedance Source Inverter With High Voltage Gain

In this letter, a new half-bridge impedance source inverter (HBISI) with high voltage conversion ratio is developed. Compared with other well-known existed HBISIs (HB-qZSIs/HB-qSBIs), the proposed HBI can increase the voltage boost factor significantly. Only a very small shoot-through (ST) duty cycle (Dsh) is required to produce a higher voltage gain. The upper and lower switches of the inverter bridge can be turned ON simultaneously, and no dead time is needed for the control scheme. So the reliability of the inverter system can be improved. The produced square-waveform output voltage not only has positive and negative voltage levels like the traditional HB-ZSI but also has a zero voltage level, and the nth harmonic of the output voltage can be eliminated by choosing D-sh = 1/n, which implies that it would be applicable for the electrochemical and electroplating applications. The topological configuration, operating principle, power loss analysis, and performance comparison with other high-boost HBISIs are presented. Finally, both simulations and the experimental results are presented to validate the effectiveness of the proposed topology.