Spin-Pump-Induced Spin Transport in p-Type Si at Room Temperature

被引：162

作者：

Shikoh, Eiji ^{[1
]}

Ando, Kazuya ^{[2
]}

Kubo, Kazuki ^{[1
]}

Saitoh, Eiji ^{[2
,3
,4
]}

Shinjo, Teruya ^{[1
]}

Shiraishi, Masashi ^{[1
,5
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

[4] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan

[5] Japan Sci & Technol Agcy, PRESTO, Tokyo 1020075, Japan

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 12期

关键词：

SILICON; SPINTRONICS; CONTACTS; FIELD;

D O I：

10.1103/PhysRevLett.110.127201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature. DOI: 10.1103/PhysRevLett.110.127201

引用

页数：5

共 50 条

[1] Spin-pump-induced spin transport in a thermally evaporated pentacene film
Tani, Yasuo
Teki, Yoshio
Shikoh, Eiji
APPLIED PHYSICS LETTERS, 2015, 107 (24)
[2] Spin Accumulation and Spin Lifetime in p-Type Germanium at Room Temperature
Iba, Satoshi
Saito, Hidekazu
Spiesser, Aurelie
Watanabe, Suguru
Jansen, Ron
Yuasa, Shinji
Ando, Koji
APPLIED PHYSICS EXPRESS, 2012, 5 (05)
[3] Spin-pump-induced spin transport in a thermally-evaporated pigment-red film
Nishida, Kazuhiro
Teki, Yoshio
Shikoh, Eiji
SOLID STATE COMMUNICATIONS, 2020, 312
[4] Dynamical Spin Injection into p-Type Germanium at Room Temperature
Koike, Mariko
Shikoh, Eiji
Ando, Yuichiro
Shinjo, Teruya
Yamada, Shinya
Hamaya, Kohei
Shiraishi, Masashi
APPLIED PHYSICS EXPRESS, 2013, 6 (02)
[5] Spin transport in p-type germanium
Rortais, F.
Oyarzun, S.
Bottegoni, F.
Rojas-Sanchez, J-C
Laczkowski, P.
Ferrari, A.
Vergnaud, C.
Ducruet, C.
Beigne, C.
Reyren, N.
Marty, A.
Attane, J-P
Vila, L.
Gambarelli, S.
Widiez, J.
Ciccacci, F.
Jaffres, H.
George, J-M
Jamet, M.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (16)
[6] Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature
Sasaki, Tomoyuki
Ando, Yuichiro
Kameno, Makoto
Tahara, Takayuki
Koike, Hayato
Oikawa, Tohru
Suzuki, Toshio
Shiraishi, Masashi
PHYSICAL REVIEW APPLIED, 2014, 2 (03):
[7] Room-Temperature Operation of a p-Type Molecular Spin Photovoltaic Device on a Transparent Substrate
Bairagi, Kaushik
Romero, David Garcia
Calavalle, Francesco
Catalano, Sara
Zuccatti, Elisabetta
Llopis, Roger
Casanova, Felix
Hueso, Luis E.
ADVANCED MATERIALS, 2020, 32 (08)
[8] Transport properties of p-type compensated silicon at room temperature
Rougieux, F. E.
Macdonald, D.
Cuevas, A.
PROGRESS IN PHOTOVOLTAICS, 2011, 19 (07): : 787 - 793
[9] Spin transport in germanium at room temperature
Shen, C.
Trypiniotis, T.
Lee, K. Y.
Holmes, S. N.
Mansell, R.
Husain, M.
Shah, V.
Li, X. V.
Kurebayashi, H.
Farrer, I.
de Groot, C. H.
Leadley, D. R.
Bell, G.
Parker, E. H. C.
Whall, T.
Ritchie, D. A.
Barnes, C. H. W.
APPLIED PHYSICS LETTERS, 2010, 97 (16)
[10] Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature (vol 2, 034005, 2014)
Sasaki, Tomoyuki
Ando, Yuichiro
Kameno, Makoto
Tahara, Takayuki
Koike, Hayato
Oikawa, Tohru
Suzuki, Toshio
Shiraishi, Masashi
PHYSICAL REVIEW APPLIED, 2018, 9 (03):

← 1 2 3 4 5 →