ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

被引：15

作者：

Hyung, Gun Woo ^{[2
]}

Park, Jaehoon ^{[3
,4
]}

Koo, Ja Ryong ^{[1
]}

Choi, Kyung Min ^{[5
]}

Kwon, Sang Jik ^{[5
]}

Cho, Eou Sik ^{[5
]}

Kim, Yong Seog ^{[2
]}

Kim, Young Kwan ^{[1
]}

机构：

[1] Hongik Univ, Dept Informat Display, Seoul 121791, South Korea

[2] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea

[3] Univ Durham, Sch Engn & Comp Sci, Durham DH1 3LE, England

[4] Univ Durham, Ctr Mol & Nanoscale Elect, Durham DH1 3LE, England

[5] Kyungwon Univ, Dept Elect Engn, Songnam 416701, South Korea

来源：

SOLID-STATE ELECTRONICS | 2012年 / 69卷

关键词：

Zinc oxide; Thin-film transistor; Atomic layer deposition (ALD); Plastic substrate; Polymeric insulator; ZINC-OXIDE; PERFORMANCE; STABILITY; TFTS;

D O I：

10.1016/j.sse.2011.12.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm(2)/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator. (c) 2011 Elsevier Ltd. All rights reserved.

引用

页码：27 / 30

页数：4

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