Preparation and Study of Bismuth Rare-Earth Tungstate Composite Screen-Printed Thick Films

被引：1

作者：

Rocha, G. N. ^{[1
]}

Melo, L. F. L. ^{[1
]}

Dantas, S. M. ^{[2
]}

Ayala, A. P. ^{[2
]}

Sombra, A. S. B. ^{[3
]}

Almeida, A. F. L. ^{[4
]}

de Menezes, A. S. ^{[5
]}

Fechine, P. B. A. ^{[1
]}

机构：

[1] Univ Fed Ceara, Dept Quim Analit & Fis Quim, Grp Quim Mat Avancados GQMAT, BR-60451970 Fortaleza, Ceara, Brazil

[2] Univ Fed Ceara, Dept Fis, BR-60451970 Fortaleza, Ceara, Brazil

[3] Univ Fed Ceara, Dept Fis, Lab Telecomunicacoes & Ciencia & Engn Mat LOCEM, BR-60451970 Fortaleza, Ceara, Brazil

[4] Univ Fed Ceara, DEMP, Ctr Tecnol, BR-60451970 Fortaleza, Ceara, Brazil

[5] Univ Fed Maranhao, CCET, Dept Fis, BR-65085580 Sao Luis, MA, Brazil

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 04期

关键词：

Bismuth rare-earth tungstate; dielectric measurement; thick films; electroceramic; ELECTRICAL-PROPERTIES;

D O I：

10.1007/s11664-012-2428-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the microstructural and dielectric properties of bismuth rare-earth tungstate composite screen-printed thick films (BiGd1-X Nd (X) WO6, BiGd1-X Y (X) WO6, and BiY1-X Nd (X) WO6). The crystal structure of BiREWO6 (RE = Gd, Nd, and Y) can be associated with the Bi2WO6 perovskite structure. It was observed that the crystalline structure was attributed to a monoclinic phase with space group A12/m1. BiYWO6 and BiY0.5Gd0.5WO6 films showed characteristics of the dielectric relaxation phenomenon. The thick films exhibited moderate dielectric permittivity (epsilon (r)') values from 10 to 42. The results showed that the obtained epsilon (r)' values for films can be useful for capacitor applications and certainly for microelectronics and microwave devices (mobile phones, for example), where miniaturization of devices is crucial.

引用

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页码：752 / 760

页数：9

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