Dopant Profiling of Silicon Calibration Specimens by Off-Axis Electron Holography

被引：0
|
作者：
Cooper, D. [1 ]
Truche, R. [1 ]
Laugier, F. [1 ]
Bertin, F. [1 ]
Chabli, A. [1 ]
机构：
[1] CEA LETI, F-38054 Grenoble 9, France
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 2007 | 2008年 / 120卷
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D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Si calibration specimens have been grown for characterisation using off-axis electron holography. Holograms were acquired using an FEI Titan electron microscope in a specially designed room allowing long acquisition times to be used. We show a significant improvement in the signal-to-noise ratio in the phase images whilst using a low electron beam intensity to reduce the effects of specimen charging.
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页码：399 / 402
页数：4
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