Effects of thermal and athermal processing on the formation of buried SiC layers

被引：5

作者：

Katharria, Y. S. ^{[1
]}

Kumar, Sandeep ^{[1
]}

Kanjilal, D. ^{[1
]}

Chauhan, Devki ^{[2
]}

Ghatak, J. ^{[3
]}

Bhatta, U. ^{[3
]}

Satyam, P. V. ^{[3
]}

机构：

[1] Interuniv Accelerator Ctr, New Delhi 110067, India

[2] Aligarh Muslim Univ, Dept Appl Phys, Aligarh 202002, Uttar Pradesh, India

[3] Inst Phys, Bhubaneswar 751005, Orissa, India

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 01期

关键词：

ION-BEAM SYNTHESIS; LOW-TEMPERATURE; EPITAXIAL CRYSTALLIZATION; RECRYSTALLIZATION; SILICON; AMORPHIZATION; IRRADIATION;

D O I：

10.1063/1.3054326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the present study, systematic investigations on 100 keV C ion implanted Si (100) substrates annealed subsequently at a temperature of 1000 degrees C for 2 h or athermally processed using 110 MeV Ni8+ ion irradiation have been performed. A detailed analysis using the techniques of x-ray diffraction, Fourier transform infrared spectroscopy, and transmission electron microscopy (TEM) at high resolutions is performed. The observations suggest the formation of cubic silicon carbide (beta-SiC) crystallites surrounded by an amorphous background in the samples thermally annealed at 1000 degrees C. However, ion irradiation did not influence the as-implanted layers to any significant extent. Various defects formed after annealing inside C implanted Si such as missing planes, edge dislocations, and grain boundaries during thermal crystallization are visualized through high resolution TEM. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3054326]

引用

页数：6

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