Effect of thickness on microstructure and electrical properties of PZT films prepared by a modified sol-gel method

被引：2
|
作者：
Liu, MW
Tong, JH
Wang, J [1 ]
Dong, WJ
Cui, TH
Wang, LD
机构：
[1] Dalian Univ Technol, Dept Elect Engn, Dalian 116023, Peoples R China
[2] Dalian Univ Technol, MST Res Ctr, Dalian 116023, Peoples R China
[3] Louisiana Tech Univ, Inst Micromfg, Ruston, LA 71272 USA
来源：
FERROELECTRICS | 2005年 / 328卷
基金：
中国国家自然科学基金;
关键词：
PZT thin film; sol-gel; thickness; orientation; electrical property;
D O I：
10.1080/00150190500310831
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A modified sol-gel multiple coating and annealing process was developed to prepare lead zirconate titanate PbZr0.5Ti0.5O3 (PZT) thin films with various thickness on Pt(111)/Ti/SiO2 /Si(100) substrates. The PZT films with thickness 280, 560 and 810 nm underwent one, two and three annealing cycles, respectively, which consisted of 5 coating layers, 10 coating layers and 15 coating layers. Surface morphology and phase structure of the thin films were studied by SEM and XRD, respectively. The relationship between the thickness, namely different annealing cycles, and degree of texture was investigated. The dielectric constant increases with increasing film thickness. The dielectric constant and dielectric loss of PZT films as functions of applied field and frequency had also been examined and discussed.
引用
收藏
页码：21 / 25
页数：5
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