Site-selective transient photoluminescence enhancement of impurity-trapped excitons in NaMgF3:Yb2+

被引:15
|
作者
Hughes-Currie, Rosa B. [1 ]
Senanayake, Pubudu S. [1 ]
Wells, Jon-Paul R. [1 ]
Reid, Michael F. [1 ,2 ]
Berden, Giel [3 ]
Reeves, Roger J. [1 ,2 ]
Meijerink, Andries [4 ]
机构
[1] Univ Canterbury, Dept Phys & Astron, Christchurch 8140, New Zealand
[2] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8140, New Zealand
[3] FOM Inst Plasmaphys Rijnhuizen, FELIX Free Electron Laser Facil, NL-3430 BE Nieuwegein, Netherlands
[4] Univ Utrecht, Debye Inst NanoMat Sci, NL-3508 TA Utrecht, Netherlands
来源
PHYSICAL REVIEW B | 2013年 / 88卷 / 10期
关键词
LUMINESCENCE; KMGF3;
D O I
10.1103/PhysRevB.88.104304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The excited-state structure of impurity-trapped excitons are measured in a multisite system. We use a two-color (UV-IR) pulsed photoluminescence enhancement technique, which probes the interlevel transitions and dynamics of impurity-trapped excitons in doped insulating phosphor materials. The technique is applied to NaMgF3:Yb2+, which exhibits emission from two charge-compensation centers with peaks at 22300 cm(-1) (448 nm) and 24000 cm(-1) (417 nm). The observed photoluminescence enhancement is caused by a combination of intraexcitonic excitation and electron trap liberation. The electron traps are inferred to have a depth of approximately 800 cm(-1).
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页数:11
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