Recent Progresses in the Growth of Two-dimensional Transition Metal Dichalcogenides

被引:14
|
作者
Jung, Yeonjoon [1 ]
Ji, Eunji [1 ]
Capasso, Andrea [1 ]
Lee, Gwan-Hyoung [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea
基金
新加坡国家研究基金会;
关键词
Two-dimensional materials; Transition metal dichalcogenides; Growth; Chemical vapor deposition; Coalescence; VAPOR-DEPOSITION GROWTH; MONOLAYER MOS2; MOLYBDENUM-DISULFIDE; VERTICAL GROWTH; ATOMIC LAYERS; FILMS; MOTE2; HETEROSTRUCTURES; VOLATILIZATION; MECHANISM;
D O I
10.4191/kcers.2019.56.1.12
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Recently, considerable progress and many breakthroughs have been achieved in the growth of two-dimensional materials, especially transition metal dichalcogenides (TMDCs), which attract significant attention owing to their unique properties originating from their atomically thin layered structure. Chemical vapor deposition (CVD) has shown great promise to fabricate large-scale and high-quality TMDC films with exceptional electronic and optical properties. However, the scalable growth of high-quality TMDCs by CVD is yet to meet industrial criteria. Therefore, growth mechanisms should be unveiled for a deeper understanding and further improvement of growth methods are required. This review summarizes the recent progress in the growth methods of TMDCs through CVD and other modified approaches to gain insights into the growth of large-scale and high-quality TMDCs.
引用
收藏
页码:24 / 36
页数:13
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