Phthalocyanine-based field-effect transistors as gas sensors

被引：181
|
作者：
Bouvet, M
机构：
[1] Ecole Super Phys & Chim Ind Ville Paris, F-75231 Paris 05, France
[2] Univ Paris 06, Lab Chim Inorgan & Mat Mol, CNRS, UMR 7071, F-75252 Paris, France
来源：
ANALYTICAL AND BIOANALYTICAL CHEMISTRY | 2006年 / 384卷 / 02期
关键词：
molecular materials; phthalocyanine; field-effect transistor; sensor; ozone; nitrogen dioxide;
D O I：
10.1007/s00216-005-3257-6
中图分类号：
Q5 [生物化学];
学科分类号：
071010 ; 081704 ;
摘要：
In this review molecular field-effect transistors are described and compared with their gate-modified inorganic counterparts. The different processes involved in gas sensing are summarized. The advantages of transistors on resistors are demonstrated. The sensitivity of molecular field-effect transistors to strong oxidizing species, for example ozone, is detailed and compared with their sensitivity to humidity and volatile organic compounds. Application to ozone monitoring in urban atmospheres is also described.
引用
收藏
页码：366 / 373
页数：8
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