Theory of metal-insulator transitions in gated semiconductors - Reply

被引：16
|
作者：
Altshuler, BL
Maslov, DL
机构：
[1] NEC Res Inst, Princeton, NJ 08540 USA
[2] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
[3] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
来源：
PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 10期
关键词：
D O I：
10.1103/PhysRevLett.83.2092
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：2092 / 2092
页数：1
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