Growth of GaAs1-xNx on GaAs(100) by chemical beam epitaxy

被引：0
|
作者：
Aardahl, CL
Yun, HK
Pearsall, TP
Rogers, JW
Qian, M
Fong, H
Sarikaya, M
机构：
[1] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA
[2] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
来源：
THIN SOLID FILMS | 1999年 / 343卷
基金：
美国国家科学基金会;
关键词：
GaAs1-xNx films; chemical beam epitaxy; triethylgallium; transmission electron microscopy;
D O I：
10.1016/S0040-6090(98)01682-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaAs1-xNx films have been grown using chemical beam epitaxy (CBE). Triethylgallium, As-2 and atomic nitrogen generated in an electron cyclotron resonance plasma were used as the Ga, As and N sources, respectively. The maximum nitrogen content in GaAs1-xNx obtained in this study was x = 0.026. As a supplemental method to secondary ion mass spectrometry and X-ray diffraction techniques for measuring the nitrogen fraction, we present preliminary results from transmission electron microscopy studies which involved the use of microdiffraction and electron energy loss spectroscopy to probe local regions of the films. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：646 / 649
页数：4
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